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Infrared avalanche photodiodes from bulk to 2D materials

Piotr Martyniuk, Peng Wang, Antoni Rogalski, Yue Gu, Ruiqi Jiang, Fang Wang, Weida Hu

Light Sci Appl. 2023; 12: 212. Published online 2023 Aug 31. doi: 10.1038/s41377-023-01259-3

PMCID:: PMC10471776

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Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Sergey Vinogradov

Sensors (Basel) 2023 Jun; 23(12): 5369. Published online 2023 Jun 6. doi: 10.3390/s23125369

PMCID:: PMC10302131

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A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices

Hari Singh Nalwa

RSC Adv. 2020 Aug 17; 10(51): 30529–30602. Published online 2020 Aug 19. doi: 10.1039/d0ra03183f

PMCID:: PMC9056353

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Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids

Antoni Rogalski, Zbigniew Bielecki, Janusz Mikołajczyk, Jacek Wojtas

Sensors (Basel) 2023 May; 23(9): 4452. Published online 2023 May 2. doi: 10.3390/s23094452

PMCID:: PMC10181614

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Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch

Jiyuan Zheng, Xingjun Xue, Cheng Ji, Yuan Yuan, Keye Sun, Daniel Rosenmann, Lai Wang, Jiamin Wu, Joe C. Campbell, Supratik Guha

Nat Commun. 2022; 13: 1517. Published online 2022 Mar 21. doi: 10.1038/s41467-022-29195-7

PMCID:: PMC8938474

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Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes

Bernhard Goll, Bernhard Steindl, Horst Zimmermann

Micromachines (Basel) 2020 Sep; 11(9): 869. Published online 2020 Sep 19. doi: 10.3390/mi11090869

PMCID:: PMC7569859

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Remote detection of radioactive material using mid-IR laser–driven electron avalanche

Robert M. Schwartz, Daniel Woodbury, Joshua Isaacs, Phillip Sprangle, Howard M. Milchberg

Sci Adv. 2019 Mar; 5(3): eaav6804. Published online 2019 Mar 22. doi: 10.1126/sciadv.aav6804

PMCID:: PMC6430623

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Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Yuanhao Miao, Hongxiao Lin, Ben Li, Tianyu Dong, Chuangqi He, Junhao Du, Xuewei Zhao, Ziwei Zhou, Jiale Su, He Wang, Yan Dong, Bin Lu, Linpeng Dong, Henry H. Radamson

Nanomaterials (Basel) 2023 Feb; 13(3): 606. Published online 2023 Feb 2. doi: 10.3390/nano13030606

PMCID:: PMC9922024

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Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes

Hailu Wang, Hui Xia, Yaqian Liu, Yue Chen, Runzhang Xie, Zhen Wang, Peng Wang, Jinshui Miao, Fang Wang, Tianxin Li, Lan Fu, Piotr Martyniuk, Jianbin Xu, Weida Hu, Wei Lu

Nat Commun. 2024; 15: 3639. Published online 2024 Apr 29. doi: 10.1038/s41467-024-47958-2

PMCID:: PMC11059283

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A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

Daoqun Liu, Tingting Li, Bo Tang, Peng Zhang, Wenwu Wang, Manwen Liu, Zhihua Li

Micromachines (Basel) 2022 Jan; 13(1): 47. Published online 2021 Dec 29. doi: 10.3390/mi13010047

PMCID:: PMC8777623

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High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region

Daoqun Liu, Peng Zhang, Bo Tang, Wenwu Wang, Zhihua Li

Micromachines (Basel) 2022 May; 13(5): 649. Published online 2022 Apr 19. doi: 10.3390/mi13050649

PMCID:: PMC9145896

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Low-noise photon counting above 100 million counts per second with a high-efficiency reach-through single-photon avalanche diode system

Michael A. Wayne, Joshua C. Bienfang, Alan L. Migdall

Appl Phys Lett. Author manuscript; available in PMC 2022 Jan 1.

Published in final edited form as: Appl Phys Lett. 2021; 118(13): 10.1063/5.0041984. doi: 10.1063/5.0041984

PMCID:: PMC8596334

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Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering

Qingyi Zhang, Ning Li, Tao Zhang, Dianmeng Dong, Yongtao Yang, Yuehui Wang, Zhengang Dong, Jiaying Shen, Tianhong Zhou, Yuanlin Liang, Weihua Tang, Zhenping Wu, Yang Zhang, Jianhua Hao

Nat Commun. 2023; 14: 418. Published online 2023 Jan 26. doi: 10.1038/s41467-023-36117-8

PMCID:: PMC9877014

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Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

Jheng-Jie Liu, Wen-Jeng Ho, Cho-Chun Chiang, Chi-Jen Teng, Chia-Chun Yu, Yen-Chu Li

Sensors (Basel) 2018 Sep; 18(9): 2800. Published online 2018 Aug 25. doi: 10.3390/s18092800

PMCID:: PMC6163703

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Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility

Qiaoli Liu, Li Xu, Yuxin Jin, Shifeng Zhang, Yitong Wang, Anqi Hu, Xia Guo

Sensors (Basel) 2022 May; 22(10): 3873. Published online 2022 May 20. doi: 10.3390/s22103873

PMCID:: PMC9146899

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Single Photon Avalanche Diode Arrays for Time-Resolved Raman Spectroscopy

Francesca Madonini, Federica Villa

Sensors (Basel) 2021 Jul; 21(13): 4287. Published online 2021 Jun 23. doi: 10.3390/s21134287

PMCID:: PMC8272195

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European In-Situ Snow Measurements: Practices and Purposes

Roberta Pirazzini, Leena Leppänen, Ghislain Picard, Juan Ignacio Lopez-Moreno, Christoph Marty, Giovanni Macelloni, Anna Kontu, Annakaisa von Lerber, Cemal Melih Tanis, Martin Schneebeli, Patricia de Rosnay, Ali Nadir Arslan

Sensors (Basel) 2018 Jul; 18(7): 2016. Published online 2018 Jun 22. doi: 10.3390/s18072016

PMCID:: PMC6068717

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Silicon-Based Avalanche Photodiodes: Advancements and Applications in Medical Imaging

Kirill A. Lozovoy, Rahaf M. H. Douhan, Vladimir V. Dirko, Hazem Deeb, Kristina I. Khomyakova, Olzhas I. Kukenov, Arseniy S. Sokolov, Nataliya Yu. Akimenko, Andrey P. Kokhanenko

Nanomaterials (Basel) 2023 Dec; 13(23): 3078. Published online 2023 Dec 4. doi: 10.3390/nano13233078

PMCID:: PMC10707864

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Integrated avalanche photodetectors for visible light

Salih Yanikgonul, Victor Leong, Jun Rong Ong, Ting Hu, Shawn Yohanes Siew, Ching Eng Png, Leonid Krivitsky

Nat Commun. 2021; 12: 1834. Published online 2021 Mar 23. doi: 10.1038/s41467-021-22046-x

PMCID:: PMC7988121

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Enhanced Responsivity and Optoelectronic Properties of Self-Powered Solar-Blind Ag₂O/β-Ga₂O₃ Heterojunction-Based Photodetector with Ag:AZO Co-Sputtered Electrode

Younghwa Yoon, Sangbin Park, Taejun Park, Hyungmin Kim, Kyunghwan Kim, Jeongsoo Hong

Nanomaterials (Basel) 2023 Apr; 13(7): 1287. Published online 2023 Apr 6. doi: 10.3390/nano13071287

PMCID:: PMC10096629

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PMC Images search for avalanche photodetector

Figure 1

Structure of the silicon avalanche photodetector (a) cross-section schematic; (b) optical microscopy image.

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

Micromachines (Basel). 2022 Jan;13(1):47.
Figure 1

Schematic diagram showing the epitaxial layer structure of the proposed InP-based avalanche photodetector (APD) based on separate absorption, grading, charge, and multiplication (SAGCM).

Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

Sensors (Basel). 2018 Sep;18(9):2800.
Figure 12

Different types of photodetectors. (a) Lateral PIN photodetector []. Reproduced with permission from Optica Publishing Group. (b) Lateral metal/semiconductor/metal avalanche photodetector []. Reprinted by permission from Springer Nature: Nature “Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects,” S. Assefa, F. Xia, Y. A. Vlasov, © 2022.

Optical Interconnects Finally Seeing the Light in Silicon Photonics: Past the Hype

Nanomaterials (Basel). 2022 Feb;12(3):485.
Fig. 4Performance comparison between adaptive resistive switch (ARS) quenching and passive resistive quenching of the counting speed of a single-photon avalanche photodiode (SPAD).

a, b Avalanche response to a single photon signal with a 20 MHz repetition rate for a single photon avalanche photodiode (SPAD) quenched by a the adaptive resistive switch (ARS) and b the 100 kΩ. c Counting rate under different repetition rate for SPAD quenched by ARS and fixed resistor. d, e Pspice simulations of a SPAD quenched by the ARS showing the variation of the following parameters as a function of time: d the avalanche current trace (blue curve) and the voltage across the SPAD (red dashed curve); and e voltage across the ARS (pink curve) and the resistance (dark curve).

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch

Nat Commun. 2022;13:1517.